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Surface engineering for nanoelectronic devices

Ga2O3 is an emerging wide-bandgap semiconducting material that has received enormous attention in recent years. This is due to its potential application in power devices, UV detectors and military applications that are unattainable by conventional semiconductors such as silicon.The operation and performance of these type of electronic devices rely critically on the surface quality and properties of the semiconducting materials. However, the surface atomic structures and electronic structures of Ga2O3 single crystals are not yet fully understood.The principal aim of …

Study level
PhD, Master of Philosophy, Honours
Faculty
Faculty of Science
School
School of Chemistry and Physics
Research centre(s)
Centre for Materials Science
Centre for Clean Energy Technologies and Practices

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